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Advance Product Information
July 22, 2003
Ku Band, 2 Watt Power Amplifier
* * * * * * * * *
TGA2510-EPU
Key Features and Performance
34 dBm Midband Psat 26 dB Nominal Gain 7 dB Typical Input Return Loss 12 dB Typical Output Return Loss 12.5 - 17 GHz Frequency Range Directional Power Detector with Reference 0.25m pHEMT 3MI Technology Bias Conditions: 7.5V, 650mA Chip Dimensions: 2.02 x 1.38 x 0.10 mm (0.080 x 0.054 x 0.004 inches)
Preliminary Measured Performance
Bias Conditions: Vd=7.5V Id=650mA
30 25 20 15 10 5 0 10 11 12 13 14 15 16 17 18 19 20 10 5
Primary Applications
S11,S22 (dB)
S21 (dB)
S21 S11 S22
0 -5 -10 -15 -20
* *
VSAT Point to Point
Frequency (GHz)
36 35 34 33 32 31 30 29 28 27 26 10 11 12 13 14 15 16 17 18 19 60 Psat 55 P2dB PAE 50 45 40 35 30 25 20 15 10
P2dB, Psat (dBm)
Frequency (GHz)
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. 1
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
PAE @ P2dB (%)
Advance Product Information
July 22, 2003
TGA2510-EPU
TABLE I MAXIMUM RATINGS Symbol VD VG ID | IG | PIN PD TCH TM TSTG 1/ 2/ 3/ 4/ Drain Voltage Gate Voltage Range Drain Supply Current (Quiescent) Gate Supply Current Input Continuous Wave Power Power Dissipation Operating Channel Temperature Mounting Temperature (30 Seconds) Storage Temperature Parameter Value 8V -5V to 0V 1300 mA 18 mA 24 dBm 6.43 W 150 C 320 C -65 to 150 C
0 0 0
Notes 1/ 2/ 1/ 1/ 2/ 1/ 1/ 2/ 1/ 2/ 3/ 4/
These ratings represent the maximum operable values for this device Combinations of supply voltage, supply current, input power, and output power shall not exceed PD at a package base temperature of 70C When operated at this bias condition with a baseplate temperature of 70C, the MTTF is reduced to 1.0E+6 hours Junction operating temperature will directly affect the device median time to failure (MTTF). For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels.
TABLE II DC PROBE TEST (TA = 25 C, Nominal) NOTES 1/ 1/ 2/ 2/ 2/ SYMBOL IDSS GM |VP| |VBVGS| |VBVGD| MIN 80 175 0.5 8 14 LIMITS MAX 381 425 1.5 30 30 UNITS mA mS V V V
1/ Measurements are performed on a 800mm FET. 2/ VP, VBVGD, and VBVGS are negative.
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. 2
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
July 22, 2003
TGA2510-EPU
TABLE III RF CHARACTERIZATION TABLE (TA = 25C, Nominal) (Vd = 7.5V, Id = 650mA 5%) Symbol Parameter Test Conditions Typ Units Notes
Gain
Small Signal Gain
F = 12.5 - 17 GHz
26
dB
IRL
Input Return Loss
F = 12.5 - 17 GHz
7
dB
ORL
Output Return Loss Output Power @ Pin = +15dBm Power Added Efficiency @ Pin=+15dBm
F = 12.5 - 17 GHz
12
dB
PWR
F = 12.5 - 17 GHz
34.0
dBm
PAE
F = 12.5 - 17 GHz
31
%
Note: Table III Lists the RF Characteristics of typical devices as determined by fixtured measurements.
TABLE IV THERMAL INFORMATION Parameter RQJC Thermal Resistance (Channel to Backside of Carrier) Test Conditions VD = 7.5V ID = 650mA PDISS = 4.88W TBASE = 70C TCH (C) 130.7 RQJC (C/W) 12.44 MTTF (hrs) 5.5E+6
Note: Assumes eutectic attach using 1.5mil 80/20 AuSn mounted to a 20mil CuMo carrier at 70C baseplate temperature. Worst case conditions with no RF applied, 100% of DC power is dissipated.
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. 3
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
July 22, 2003
30 25 20
Typical Fixtured Performance Id=650mA
TGA2510-EPU
S21 (dB)
Vd=7.5V Vd=5V
15 10 5 0 10 0 -2 -4 -6 11 12 13 14 15 16 17 18 19 20
Frequency (GHz)
S11 (dB)
-8 -10 -12 -14 -16 -18 -20 10 11 12 13 14 15 16 17 18 19 20 Vd=7.5V Vd=5V
Frequency (GHz)
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. 4
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
July 22, 2003
0 -2 -4 -6
Typical Fixtured Performance Id=650mA
TGA2510-EPU
Vd=7.5V Vd=5V
S22 (dB)
-8 -10 -12 -14 -16 -18 -20 10
36 35 34
11
12
13
14
15
16
17
18
19
20
Frequency (GHz)
Vd=5V Vd=7.5V
P2dB (dBm)
33 32 31 30 29 28 27 26
10
11
12
13
14
15
16
17
18
19
Frequency (GHz)
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. 5
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
July 22, 2003
36 35 34 33
Typical Fixtured Performance Id=650mA
TGA2510-EPU
Vd=5V Vd=7.5V
Psat (dBm)
32 31 30 29 28 27 26
10
60 55 50 45 40 35 30 25 20 15 10 5 0
11
12
13
14
15
16
17
18
19
Frequency (GHz)
Vd=5V Vd=7.5V
PAE @ P2dB (%)
10
11
12
13
14
15
16
17
18
19
Frequency (GHz)
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. 6
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
July 22, 2003
40.0 37.5 35.0 32.5
Typical Fixtured Performance Id=650mA
Vd=7.5V
TGA2510-EPU
1700 1600 1500 1400
Pout (dBm)
27.5 25.0 22.5 20.0 17.5 15.0 0 35.0 32.5 30.0 27.5 2 4 6 8 10 12 14 16 18 20 12.5 GHz 13 GHz 14 GHz 16 GHz
1200 1100 1000 900 800 700
Pin (dBm) Vd=5V
1500 1400 1300 1200
Pout (dBm)
22.5 20.0 17.5 15.0 12.5 10.0 0 2 4 6 8 10 12 14 16 18 20 12.5 GHz 13 GHz 14 GHz 16 GHz
1000 900 800 700 600 500
Pin (dBm)
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. 7
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
Id (mA)
25.0
1100
Id (mA)
30.0
1300
Advance Product Information
July 22, 2003
Mechanical Drawing
TGA2510-EPU
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. 8
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
July 22, 2003
TGA2510-EPU Power Detector
+5V
40KW
40KW
External
Vref Vdet
Chip
5pF
50W
DUT
RF out
0.6 0.5
TGA2510 Power Detector @ 14GHz
Vref-Vdet (V)
0.4 0.3 0.2 0.1 0 14 16 18 20 22 24 26 28 30 32 34 36 38 40
Pout (dBm)
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. 9
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
July 22, 2003
TGA2510-EPU Chip Assembly & Bonding Diagram Vd
100pF Off chip R=10W Off chip C=0.1mF
Input TFN
Output TFN
Vg
Off chip R=10W 100pF Off chip C=0.1mF
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test.
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. 10
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
July 22, 2003
TGA2510-EPU Assembly Process Notes
Reflow process assembly notes: * * * * * Use AuSn (80/20) solder with limited exposure to temperatures at or above 300C. (30 seconds maximum) An alloy station or conveyor furnace with reducing atmosphere should be used. No fluxes should be utilized. Coefficient of thermal expansion matching is critical for long-term reliability. Devices must be stored in a dry nitrogen atmosphere.
Component placement and adhesive attachment assembly notes: * * * * * * * Vacuum pencils and/or vacuum collets are the preferred method of pick up. Air bridges must be avoided during placement. The force impact is critical during auto placement. Organic attachment can be used in low-power applications. Curing should be done in a convection oven; proper exhaust is a safety concern. Microwave or radiant curing should not be used because of differential heating. Coefficient of thermal expansion matching is critical.
Interconnect process assembly notes: * * * * Thermosonic ball bonding is the preferred interconnect technique. Force, time, and ultrasonics are critical parameters. Aluminum wire should not be used. Maximum stage temperature is 200C.
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test.
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. 11
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com

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